tip140t / tip141t / tip142t ? npn epitaxial silicon darlington transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com tip140t / tip141t / tip142t rev. b2 1 july 2009 tip140t / tip141t / tip142t npn epitaxial silicon darlington transistor features ? monolithic construction with built in base-emitter shunt resistors ? high dc current gain : h fe = 1000 @ v ce = 4v, i c = 5a (min.) ? industrial use ? complement to tip145t/146t/147t absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. symbol parameter value units v cbo collector-base voltage : tip140t : tip141t : tip142t 60 80 100 vv v v ceo collector-emitter voltage : tip140t : tip141t : tip142t 60 80 100 vv v v ebo emitter-base voltage 5 v i c collector current (dc) 10 a i cp collector current (pulse) 15 a i b base current (dc) 0.5 a p c collector dissipation (t c =25 c) 80 w t j junction temperature 150 c t stg storage temperature -65 to +150 c 1.base 2.collector 3.emitter 1 to-220 equivalent circuit b e c r1 r2 r1 8k ? r2 0.12k ?
tip140t / tip141t / tip142t ? npn epitaxial silicon darlington transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com tip140t / tip141t / tip142t rev. b2 2 electrical characteristics t a = 25c unless otherwise noted symbol parameter test condition min. typ. max. units v ceo (sus) collector-emitter sustaining voltage : tip140t : tip141t : tip142t i c = 30ma, i b = 0 60 80 100 vv v i ceo collector cut-off current : tip140t : tip141t : tip142t v ce = 30v, i b = 0 v ce = 40v, i b = 0 v ce = 50v, i b = 0 2 2 2 ma ma ma i cbo collector cut-off current : tip140t : tip141t : tip142t v cb = 60v, i e = 0 v cb = 80v, i e = 0 v cb = 100v, i e = 0 1 1 1 ma ma ma i ebo emitter cut-off current v be = 5v, i c = 0 2 ma h fe dc current gain v ce = 4v, i c = 5a v ce =4v, i c = 10a 1000 500 v ce (sat) collector-emitter saturation voltage i c = 5a, i b = 10ma i c = 10a, i b = 40ma 23 vv v be (sat) base-emitter saturation voltage i c = 10a, i b = 40ma 3.5 v v be (on) base-emitter on voltage v ce = 4v, i c = 10a 3 v t d delay time v cc = 30v, i c = 5a i b1 = 20ma i b2 = -20ma r l = 6 0.15 s t r rise time 0.55 s t stg storage time 2.5 s t f fall time 2.5 s
tip140t / tip141t / tip142t ? npn epitaxial silicon darlington transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com tip140t / tip141t / tip142t rev. b2 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage base-emitter saturation voltage figure 4. collector output capacitance figure 5. safe operating area figure 6. power derati ng 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 i b = 2000ua i b = 1800ua i b = 1600ua i b = 1400ua i b = 1 2 0 0 u a i b = 1 0 0 0 u a i b = 800ua i b = 600ua i b = 400ua i b = 200ua i c [a], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 10 100 1k 10k 100k v ce = 4v h fe , dc current gain i c [a], collector current 0.1 1 10 100 0.01 0.1 1 10 i c =500i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 1 10 100 1000 10 100 1000 f=0.1mhz v cb [v], collector-base voltage c ob [pf], capacitance 1 10 100 1000 0.1 1 10 100 tip141t tip142t tip140t dc i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 20 40 60 80 100 p c [w], power dissipation t c [ o c], case temperature
tip140t / tip141t / tip142t ? npn epitaxial silicon darlington transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com tip140t / tip141t / tip142t rev. b2 4 physical dimensions to-220
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